20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 C290 C290 - c291 series c291 C290f C290a C290b C290c C290d C290e, c291e C290m, c291m C290s, c291s C290n, c291n C290t, c291t C290p, c291p C290pa, c291pa C290pb, c291pb .- '' '?* ??"?' '- ' ?',?*? 50 volts 100 200 300 400 500 600 700 800 900 1000 1100 1200 n??-r*pititiv? peak voltog* ; 100 volts 200 300 400 500 600 700 800 900 1000 1100 1200 1300 peak forward vohog* _. ,: (norcctotrvctlvt) ^^ tj = +23*clo +i25*c. (<5mill!t*tend?) t* 400 volts 400 400 400 500 600 700 800 900 1000 1100 1200 1300 maximum allowable ratings rms forward current, on-state 470 amperes (all conduction angles) average forward current, on-state depends on conduction angle (see charts 3 and 5) peak one-cycle surge forward current, ipsm 5500 amperes i2t (for fusing) up to 120,000 ampere2 seconds (for times ^ 8.3 milliseconds) up to 41,000 ampere2 seconds xfor times ^ 1,5 milliseconds) peak gate power dissipation, pgm 16 watts average gate power dissipation, pg 3 watts peak forward gate voltage, vgfm 20 volts peak reverse gate voltage, vgbm 5 volts operating temperature & storage temperature, tj & t8to ?40c to +125c stud torque (C290) < 300 in.-lbs. ? (346kg-cm) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
?v-slwfl " :& . gate trigger current gate trigger voltage peak on-voltage holding current turn-on time (delay time + rise time) circuit commutated turn-off time effective thermal resistance dc linear rate of rise of forward blocking voltage max. allowable rise of forward current ( sinusoidal waveform) symbol i?t vgt vtm ih td + t, t. rsjc dv/dt di/dt min. ? 0.15 . 100 ?p, 100 150 50 250 ? 25 10 250 *max, 150 200 3.5 1.21 100 ? .118 50 ?4fc madc vdc v madc msec fisec c/watt v/ynsec a/*isec tj = + 25c tj = 0c vd = 12 vdc, tj = + 125c rl = 50 ohms t, = - 40c t, = - 40c to +125c) vd = 6 vdc, t, = +125c ( rl = 50 ohms t, = + 25c, ith = 500 a peak tj = +25c, anode supply = 22 vdc tj = +26c, ip = 5adc, vdt.m = 50 volts gate supply : 10 volts open circuit, 10 ohm, 0.1 msec maximum rise time.1 tj = + 125c, i? = 250 a, vh = 50 v max. vdhm (reapplied) = rated. rate of rise of reapplied forward blocking voltage = 20 volts /,?sec linear. junction to case, maximum. dc = .118, 10 = .13, 3* = .138, 6 |
